Single crystals of magnesia (MgO) and yttria-stabilized zirconia (YSZ) with (1 0 0), (1 1 0) and (1 1 1) orientations were implanted with 100 and 150 keV Ar + ions at room temperature. Rutherford backscattering spectrometry combined with ion channeling (RBS/C) was used to analyze radiation damage. R
β¦ LIBER β¦
Dynamic annealing of damage in Ar+-implanted GaAs crystals
β Scribed by A.A. Kutas; T.V. Kovyazina; A.N. Akimov; G.A. Gusakov; F.F. Komarov; A.P. Novikov; L.A. Vlasukova
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 358 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0921-5107
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