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due to isoelectronic-impurity-induced perturbation of the conduction band

✍ Scribed by Fluegel, B.; Mascarenhas, A.; Ptak, A. J.; Tixier, S.; Young, E. C.; Tiedje, T.

Book ID
121421799
Publisher
The American Physical Society
Year
2007
Tongue
English
Weight
211 KB
Volume
76
Category
Article
ISSN
1098-0121

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πŸ“œ SIMILAR VOLUMES

The Influence of Correlation and Band St
The Influence of Correlation and Band Structure Effects on an Exciton Weakly Bound to an Isoelectronic Impurity
✍ H. Geistlinger; W. Weller πŸ“‚ Article πŸ“… 1985 πŸ› John Wiley and Sons 🌐 English βš– 479 KB

## Abstract A variational method for the ground state of an exciton bound to an isoelectronic impurity is developed. In contrast to the HTL model the correlation between the electron and the hole is taken into account for the first time, using instead of the hole coordinates the relative electron‐h