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Dual step EBL Gate fabrication technology for GaN-HEMT wideband applications

✍ Scribed by D. Dominijanni; E. Giovine; A. Notargiacomo; A. Pantellini; P. Romanini; M. Peroni; A. Nanni

Book ID
104052938
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
805 KB
Volume
88
Category
Article
ISSN
0167-9317

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## Abstract In this article, we propose a wideband GaN HEMT power amplifier (PA) based on the dual‐fed distributed structure for 2.6 GHz WiMAX applications. For a continuous wave, the distributed PA shows the wideband performance compared with the conventional balanced PA. When the distributed PA i