Dual mesh approach for semiconductor device simulator
✍ Scribed by Kojima, T.; Saito, Y.; Dang, R.
- Book ID
- 114548204
- Publisher
- IEEE
- Year
- 1989
- Tongue
- English
- Weight
- 235 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0018-9464
- DOI
- 10.1109/20.34335
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📜 SIMILAR VOLUMES
## Abstract This paper discusses a new post‐process algorithm for generating valid Delaunay meshes for the Box‐method (finite‐volume method) as required in semiconductor device simulation. In such an application, the following requirements must be considered: (i) in critical zones of the device, ed
## Abstract In this paper, we present a parallel three‐dimensional semiconductor device simulator for gradual heterojunction bipolar transistor. This simulator uses the drift‐diffusion transport model. The Poisson equation and continuity equations were discretized using a finite element method (FEM