Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

✍ Scribed by Shiyang Zhu; M.F. Li

• Book ID: 108269567
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 316 KB
• Volume: 50
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2006.05.023