✦ LIBER ✦

Drift-diffusion theory of symmetrical double-junction diodes

✍ Scribed by Pierre E. Schmidt; Heinz K. Henisch

Publisher: Elsevier Science
Year: 1982
Tongue: English
Weight: 378 KB
Volume: 25
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(82)90153-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Impurity diffusion and drift in germaniu

Impurity diffusion and drift in germanium tunnel-diode junctions

✍ J.H. Buckingham; K.F. Hulme; J.R. Morgan 📂 Article 📅 1963 🏛 Elsevier Science 🌐 English ⚖ 937 KB

Numerical drift-diffusion simulation of

Numerical drift-diffusion simulation of Auger hot electron transport in Ingaasp/Inp double heterojunction laser diodes

✍ Kam-Wing Chai; Zhan-Ming Li; Sean P. McAlister; John G. Simmons 📂 Article 📅 1994 🏛 John Wiley and Sons 🌐 English ⚖ 911 KB

This paper considers the adaptation of drift-diffusion device simulation methodology to study Auger-recombination-induced hot electron transport characteristics in InGaAsP/InP double heterostructure laser diodes. In order to model the transport behaviour of the Auger hot electrons, we decompose the

Computer analysis of negative resistance

Computer analysis of negative resistance profiles in silicon double drift diodes including the carrier diffusion effect

✍ Dash, G. N. ;Pati, S. P. 📂 Article 📅 1991 🏛 John Wiley and Sons 🌐 English ⚖ 625 KB

On the theory of the symmetrical double

On the theory of the symmetrical double SQUID

✍ B. Chesca 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 591 KB

High frequency characterisation of doubl

High frequency characterisation of double drift region InP and GaAs diodes

✍ J. P. Banerjee; S. P. Pati; S. K. Roy 📂 Article 📅 1989 🏛 Springer 🌐 English ⚖ 597 KB

The Influence of Drift-Diffusion Process

The Influence of Drift-Diffusion Processes onI–V Characteristics of Si Schottky Diodes

✍ Simeonov, S. S. ;Kafedjiiska, E. I. ;Guerassimov, A. L. 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 565 KB