๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Drastic reduction of leakage current in ferroelectric Bi3.15Nd0.85Ti3O12 films by ionizing radiation

โœ Scribed by Qunji Shi; Ying Ma; Yushu Li; Yichun Zhou


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
477 KB
Volume
269
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Leakage current and ferroelectric memory
โœ M.S. Tomar; R.E. Melgarejo; S.P. Singh ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 384 KB

Leakage current in ferroelectric devices is important because it affects the saturation. Rare earth substituted bismuth titanate (Bi 4 Ti 3 O 12 ) electroceramics has emerged as new material system for non-volatile ferroelectric memory. We synthesized Bi 4Kx M x Ti 3 O 12 (MZNd, Sm) for different co

Effects of annealing schedule on orienta
โœ H.Y. He; J.F. Huang; L.Y. Cao; L.S. Wang ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 633 KB

Fatigue-free Bi 3.2 Nd 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si(1 1 1) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing schedules were studied. XRD analysis indicated that (2 0 0)-oriented film