Leakage current in ferroelectric devices is important because it affects the saturation. Rare earth substituted bismuth titanate (Bi 4 Ti 3 O 12 ) electroceramics has emerged as new material system for non-volatile ferroelectric memory. We synthesized Bi 4Kx M x Ti 3 O 12 (MZNd, Sm) for different co
โฆ LIBER โฆ
Drastic reduction of leakage current in ferroelectric Bi3.15Nd0.85Ti3O12 films by ionizing radiation
โ Scribed by Qunji Shi; Ying Ma; Yushu Li; Yichun Zhou
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 477 KB
- Volume
- 269
- Category
- Article
- ISSN
- 0168-583X
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