Drain engineering of hot-carrier-resistant MOSFETs using concave silicon surfaces for deep submicron VLSI technology

✍ Scribed by P. Ratnam; A. Naem

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 488 KB
• Volume: 33
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(90)90095-v