Drain engineering of hot-carrier-resistant MOSFETs using concave silicon surfaces for deep submicron VLSI technology : P. Ratnam and A. Naem. Solid-St. Electron.33(9), 1163 (1990)

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 129 KB
• Volume: 32
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(92)90230-i