✦ LIBER ✦

Drain efficiency amplifier of 50% with optimized power range for CDMA base station

✍ Scribed by Guangming Zheng; Weigan Lin

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 653 KB
Volume: 52
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.25195

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

A novel high‐efficiency Doherty amplifier is presented here.A carrier amplifier and a peak amplifier are set to asymmetrical drain voltages to extend the power range where a high efficiency of the amplifier is maintained. In Doherty amplifier, matching circuits of the carrier amplifier and peak amplifier are designed for each drain voltage so that the efficiency and signal linearity of the amplifier at a 7.2 dB back‐off point from its saturated output power become higher than those of a conventional amplifier. A Doherty amplifier containing laterally‐diffused metal‐oxide semiconductor field‐effect transistors achieves an adjacent channel leakage power ratio of −30.89 dBc and a drain efficiency of 50% at an output power of 49.3 dBm. This is the highest drain efficiency of a Doherty amplifier for a CDMA signal to the best of the authors' knowledge. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1244–1246, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25195

📜 SIMILAR VOLUMES

Efficiency ehancement of W-CDMA base-sta

Efficiency ehancement of W-CDMA base-station envelope tracking power amplifiers via load modulation

✍ Jinho Jeong; Peter Asbeck 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 250 KB

## Abstract Load impedance modulation and gate bias control were investigated to improve the performance of W‐CDMA base‐station envelope tracking amplifiers by means of simulations based on the measured data of a 10‐W GaAs FET power amplifier. It is shown that adapting the load impedance along with

Drain-voltage dependency of memory effec

Drain-voltage dependency of memory effects in W-CDMA base station digital predistortion linearizers with compound semiconductor power amplifiers

✍ Takeshi Takano; Yasuyuki Oishi; Toru Maniwa; Hiroyuki Hayashi; Toshihide Kikkawa 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 470 KB

With regard to wideband predistortion type power amplifiers, such as shared amplifiers used in W-CDMA base stations, the memory effects associated with RF power amplifiers degrade power efficiency. Aiming to solve this problem, we find that a high-voltage compound semiconductor device has sufficient

A 40-W balanced GaN HEMT class-E power a

A 40-W balanced GaN HEMT class-E power amplifier with 71% efficiency for WCDMA base station

✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 327 KB

## Abstract A balanced class‐E power amplifier (PA) using a push‐pull GaN HEMT for high power and high efficiency is represented. For validation, a class‐E PA is designed and implemented using a push‐pull type GaN HEMT and tested for a single tone of 2.14 GHz. The measured results show that the bal