Doubly positively charged oxygen vacancies in silica glass
β Scribed by Anna V. Kimmel; Alexander L. Shluger
- Book ID
- 116671596
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 308 KB
- Volume
- 355
- Category
- Article
- ISSN
- 0022-3093
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π SIMILAR VOLUMES
Using first principles calculations in a periodic amorphous silica supercell, we calculated the energies and the migration barriers of a positively charged oxygen vacancy in pure and germanium-doped silica. The results show that the puckered and dimer structures of the Si-E 0 and of the Ge-E 0 cente
The charge trapping and positive bias temperature instability (PBTI) are investigated at different post deposition annealing conditions (PDA) in HfO 2 nMOSFET. Pulse based measurements (Pulsed Id-Vg and "Pulse on the fly") are performed to characterize charge trapping effect. Compared with NH 3 PDA,