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Double shocks for a hydrodynamic model of semiconductors

✍ Scribed by Shu-Yi Zhang; Ya-Guang Wang

Publisher
Springer
Year
2007
Tongue
English
Weight
340 KB
Volume
59
Category
Article
ISSN
0044-2275

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πŸ“œ SIMILAR VOLUMES

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= H Β± 1 (U Β± \* ; ΓΏ \* ; (βˆ‡ΓΏ) \* ; (βˆ‡ Β± ) \* ) in Β± Γ— [0; T ]; U Β± \* ( x; 0) = U Β± 0 \* ( x) in Β± ; (u + \* ; v + \* ; w + \* ) β€’ | @ Γ—[0;T ] = 0; G(U + \* ; U - \* ; ΓΏ \* ; @ t ΓΏ \* ; (βˆ‡ΓΏ) \* )| M0Γ—[0;T ] where Then we use them to solve the initial-boundary value problem (4.2) -(4.5) to get (U Β±

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## Communicated by B. Brosowski This paper concerns the well-posedness of the hydrodynamic model for semiconductor devices, a quasilinear elliptic-parbolic-hyperbolic system. Boundary conditions for elliptic and parabolic equations are Dirichlet conditions while boundary conditions for the hyperbo