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Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots

✍ Scribed by A. I. Yakimov; A. A. Bloshkin; A. V. Dvurechenskii

Book ID
110169442
Publisher
SP MAIK Nauka/Interperiodica
Year
2010
Tongue
English
Weight
234 KB
Volume
92
Category
Article
ISSN
0021-3640

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πŸ“œ SIMILAR VOLUMES

Hole states in vertically coupled double
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Using a six-band k Á p formalism we investigated the single-particle hole states in the double quantum dots made of two identical, vertically stacked, Ge/Si nanoclusters. The elastic strain due to the lattice mismatch between Ge and Si was included into the problem via Bir-Pikus Hamiltonian. As cons

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## Abstract The temperature and magnetic field dependences of the conductivity associated with hopping transport of holes over 2D arrays of Ge/Si quantum dots with various filling factors are studied experimentally. A transition from the Efros‐Shklovskii law for the temperature dependence of hoppin