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Double-emitter multi-purpose transistor

Book ID
103082915
Publisher
Elsevier Science
Year
1960
Tongue
English
Weight
69 KB
Volume
269
Category
Article
ISSN
0016-0032

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A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the \(\mathrm{i}-\mathrm{Al}_{0.5} \mathrm{Ga}_{0.5} \mathrm{As} / \mathrm{n}^{+}-\mathrm{GaAs}\) superlattice is used as