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Double diffused pnp GaAs transistor

โœ Scribed by H. Statz


Book ID
103392271
Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
204 KB
Volume
8
Category
Article
ISSN
0038-1101

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๐Ÿ“œ SIMILAR VOLUMES


Charge storage characteristics of pnp Ga
โœ Jun Ohsawa; Yoshinobu Nekado; Norihiro Katayama; Yasuhiro Saito; Masatoshi Migit ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 154 KB

Memory capacitors of gallium arsenide pnp structure have been fabricated by use of iron diffusion through n/n + /n epitaxial layers. The deep acceptor level of iron was successfully utilized to selectively compensate the lightly doped n-type outer layers. The pnp structure exhibits leakage current c