Charge storage characteristics of pnp GaAs layers prepared by iron diffusion
✍ Scribed by Jun Ohsawa; Yoshinobu Nekado; Norihiro Katayama; Yasuhiro Saito; Masatoshi Migitaka; Nuio Tsuchida
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 154 KB
- Volume
- 80
- Category
- Article
- ISSN
- 8756-663X
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✦ Synopsis
Memory capacitors of gallium arsenide pnp structure have been fabricated by use of iron diffusion through n/n + /n epitaxial layers. The deep acceptor level of iron was successfully utilized to selectively compensate the lightly doped n-type outer layers. The pnp structure exhibits leakage current comparable to that of a low-leakage GaAs diode. The surface conductance decreases below one tenth after the pnp capacitor is biased at 3 V, which is due to depletion of carriers in the p-type layers. The charge storage time measured by the conductance change was 83 s. Recovery of the conductance by illumination has also been confirmed.