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Dose-dependent thermal oxidation of Ge+-implanted silicon

✍ Scribed by Khalid Hossain; O.W. Holland; F.U. Naab; L.J. Mitchell; P.R. Poudel; J.L. Duggan; F.D. McDaniel


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
204 KB
Volume
261
Category
Article
ISSN
0168-583X

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Rate enhancement during thermal oxidatio
✍ K. Hossain; L.K. Savage; O.W. Holland πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 316 KB

The oxidation kinetics of Ge + -implanted Si(1 0 0) were determined over a temperature range of 900-1100 Β°C in both dry and wet O 2 conditions. It will be shown that the implanted Ge substantially enhances the kinetics (compared to that in virgin Si) under certain conditions. Segregation of the Ge d