Rate enhancement during thermal oxidatio
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K. Hossain; L.K. Savage; O.W. Holland
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Article
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2005
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Elsevier Science
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English
β 316 KB
The oxidation kinetics of Ge + -implanted Si(1 0 0) were determined over a temperature range of 900-1100 Β°C in both dry and wet O 2 conditions. It will be shown that the implanted Ge substantially enhances the kinetics (compared to that in virgin Si) under certain conditions. Segregation of the Ge d