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Doping of rf-sputtered a-SiGe:H alloys

✍ Scribed by P.K. Banerjee; J.M.T. Pereira; G.A. Hanidu; S.S. Mitra


Book ID
115986468
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
316 KB
Volume
104
Category
Article
ISSN
0022-3093

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## Abstract Photoinduced carrier lifetimes of RF sputtered a‐Si:H alloy are measured by time‐resolved reflectivity and photoconductivity decay methods. Both experiments indicate a lifetime of about 5 ΞΌs. A calculation of the relaxation time of photogenerated carriers from extended mobility edge to