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Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

✍ Scribed by M. D. Vilisova; A. E. Kunitsyn; L. G. Lavrent’eva; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin; S. E. Toropov; V. V. Chaldyshev

Book ID
110132335
Publisher
Springer
Year
2002
Tongue
English
Weight
67 KB
Volume
36
Category
Article
ISSN
1063-7826

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Low-temperature molecular beam epitaxy of Ge on Si
✍ J.P. Leitão; A. Fonseca; N.A. Sobolev; M.C. Carmo; N. Franco; A.D. Sequeira; T.M 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 389 KB

Multilayers of Ge were deposited on (0 0 1) Si at low temperatures (250 and 300 C). The structural characterization was done by X-ray diffraction and reflectivity as well as by atomic force microscopy technics. The photoluminescence (PL) spectra reveal a quantum well (QW) emission that shifts to low