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Doping-Induced Charge Trapping in Organic Light-Emitting Devices

✍ Scribed by F. Nüesch; D. Berner; E. Tutiš; M. Schaer; C. Ma; X. Wang; B. Zhang; L. Zuppiroli

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
424 KB
Volume
15
Category
Article
ISSN
1616-301X

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Electrochemical interface doping is introduced as a new concept for the realization of organic light‐emitting field‐effect transistors (O‐LEFTs). In a bottom contact tetracene transistor a 2–4 nm poly(ethylene‐oxide) layer with lithium triflate was inserted as interface layer between the gate‐oxide