We performed electrical and optical measurements on as-grown ZnO which exhibits n-type conductivity. So far, neither the origin of the residual conductivity nor the electrical properties of the responsible defects is fully understood. We investigated shallow and deep donors in ZnO materials grown wi
β¦ LIBER β¦
Donor-related defect states in ZnO substrate material
β Scribed by A. Schildknecht; R. Sauer; K. Thonke
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 237 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Characterization of donor states in ZnO
β
D. Seghier; H.P. Gislason
π
Article
π
2007
π
Elsevier Science
π
English
β 165 KB
Excited States of a Hydrogen-Intrinsic D
β
S.Zh. Tokmoldin; B.N. Mukashev
π
Article
π
1998
π
John Wiley and Sons
π
English
β 145 KB
π 2 views
Li-related defects in ZnO: Hybrid functi
β
A. Carvalho; A. Alkauskas; Alfredo Pasquarello; A.K. Tagantsev; N. Setter
π
Article
π
2009
π
Elsevier Science
π
English
β 208 KB
Defect study in ZnO related structuresβA
β
C.C. Ling; C.K. Cheung; Q.L. Gu; X.M. Dai; S.J. Xu; C.Y. Zhu; J.M. Luo; C.Y. Zhu
π
Article
π
2008
π
Elsevier Science
π
English
β 526 KB
Defect-Related Donors, Acceptors, and Tr
β
D.C. Look
π
Article
π
2001
π
John Wiley and Sons
π
English
β 108 KB
π 1 views
Point defects have been created in GaN by various types of irradiation: electrons (1 and 2.5 MeV, and the spectrum from 90 Sr); protons (0.15 MeV, 2 MeV, and 24 GeV); He ions (5.4 MeV); g-rays ( 60 Co); and sputtering and e-beam deposition of metals. They have been studied by temperaturedependent Ha
Magnetic resonance studies of defects in
β
N.T. Son; I.G. Ivanov; A.Yu. Kuznetsov; B.G. Svensson; Q.X. Zhao; M. Willander;
π
Article
π
2007
π
Elsevier Science
π
English
β 310 KB