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Domain structure and dielectric properties of TGS and DTGS single crystals depending on growth conditions

✍ Scribed by Doc. M. S. Tsedrik; G. A. Zaborovski; N. P. Demidovich; L. N. Margolin

Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
922 KB
Volume
10
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

The influence of growth temperature and supersaturation of solution on domain structure and dielectric properties of TGS and DTGS single crystals was investigated. The qualitative and quantitative analysis of domain structures was carried out. The optimal growth conditions were found. It proves to be useful to arrange the measured values in table where lines correspond to growth temperatures and columns – to supersaturations for investigation of optimal growth conditions. The diagonal of extremal values exists in this table. The existence of optimal growth conditions explains in terms of interaction between domain and defect structures.

πŸ“œ SIMILAR VOLUMES

Critical behaviour and internal bias of
Critical behaviour and internal bias of TGS and isomorphous crystals depending on growth conditions
✍ M. S. Tsedrik; G. A. Zaborovski πŸ“‚ Article πŸ“… 1976 πŸ› John Wiley and Sons 🌐 English βš– 429 KB πŸ‘ 1 views

## Abstract The critical behaviour of TGS and isomorphous DTGS, TGSe and DTGSe single crystals grown at various conditions was investigated. The growth dependences for Ξ”__T__ in heating and cooling regimes and shift Ξ”__T__ of the temperature of maximal permittivity were found. These dependencies we