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Critical behaviour and internal bias of TGS and isomorphous crystals depending on growth conditions

✍ Scribed by M. S. Tsedrik; G. A. Zaborovski

Publisher: John Wiley and Sons
Year: 1976
Tongue: English
Weight: 429 KB
Volume: 11
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.19760110408

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✦ Synopsis

Abstract

The critical behaviour of TGS and isomorphous DTGS, TGSe and DTGSe single crystals grown at various conditions was investigated. The growth dependences for Δ__T__ in heating and cooling regimes and shift Δ__T__ of the temperature of maximal permittivity were found. These dependencies were explained in terms of existence of internal biasing fields these being measured vs temperature.

📜 SIMILAR VOLUMES

Domain structure and dielectric properti

Domain structure and dielectric properties of TGS and DTGS single crystals depending on growth conditions

✍ Doc. M. S. Tsedrik; G. A. Zaborovski; N. P. Demidovich; L. N. Margolin 📂 Article 📅 1975 🏛 John Wiley and Sons 🌐 English ⚖ 922 KB

## Abstract The influence of growth temperature and supersaturation of solution on domain structure and dielectric properties of TGS and DTGS single crystals was investigated. The qualitative and quantitative analysis of domain structures was carried out. The optimal growth conditions were found. I