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Distribution of doped Mn at the Σ3 (1 1 2) grain boundary in Ge

✍ Scribed by W. Wang; S.L. Zhang; Z.X. Tian; W. Xiao


Book ID
108191716
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
411 KB
Volume
71
Category
Article
ISSN
0022-3697

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An in-situ annealing experiment has been performed on an intergranular dislocation configuration composed only of glissile grain boundary dislocations observed in a near Σ = 3 {1 1 1} grain boundary in copper. Relaxation phenomena are not obvious than those predicted by theoretical models. Upon anne