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Distribution of charge carriers in dissipative semiconductor structures

✍ Scribed by I. K. Kamilov; A. A. Stepurenko; A. S. Kovalev

Book ID
110129455
Publisher
Springer
Year
2002
Tongue
English
Weight
83 KB
Volume
36
Category
Article
ISSN
1063-7826

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Experimental results on field ionization of shallow impurities in GaAs:Be and Ge:Sb,P are presented. In both materials enhacement of the impurity-to-band tunnelling rate was observed when lattice temperature was raised. Acoustic phonon-assisted and -activated tunnelling mechanisms are employed to ex