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Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy

✍ Scribed by G.A. Antypas; J. Edgecumbe

Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
525 KB
Volume
34
Category
Article
ISSN
0022-0248

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## Abstract In this paper the growth of Al~x~Ga~1–x~As layers with nearly constant composition along their thickness is described. By means of electroluminescence and cathodoluminescence measurements recombination mechanisms connected with the presence of Si are discussed. The aging behaviour of th