Misfit dislocation dipoles in Si/SiGe/Si
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Tongda Ma; Hailing Tu; Beiling Shao; Ansheng Liu; Guangyong Hu
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Article
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2006
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Elsevier Science
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English
β 243 KB
Transmission electron microscopy (TEM) and synchrotron radiation double-crystal topography (SRDT) have been employed to investigate Si/SiGe/Si heterostructures grown by ultra-high vacuum chemical vapor deposition (UHVCVD) on bonded Si-on-insulator (SOI) wafers. A configuration of misfit dislocation