We report the growth of a p + -n + -GaAs tunnel diode by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE), using carbon (C) and silicon (Si) as p-type and n-type dopants, respectively. The more efficient incorporation of silicon on donor sites and carbon on acceptor sites, results in a
✦ LIBER ✦
Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy
✍ Scribed by A. Säynätjoki; A. Lankinen; T. O. Tuomi; P. J. McNally; A. Danilewsky; Y. Zhilyaev; L. Fedorov
- Book ID
- 106397775
- Publisher
- Springer US
- Year
- 2007
- Tongue
- English
- Weight
- 497 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0957-4522
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
High Quality p+-n+-GaAs Tunnel Junction
✍
Beji, L. ;el Jani, B. ;Gibart, P.
📂
Article
📅
2001
🏛
John Wiley and Sons
🌐
English
⚖ 115 KB
InAsSb p-n junction light emitting diode
✍
Y. Mao; A. Krier
📂
Article
📅
1995
🏛
Elsevier Science
🌐
English
⚖ 502 KB
Electrical and optical characterisation
✍
M.Y. Simmons; H.M. Al Allak; A.W. Brinkman; K. Durose
📂
Article
📅
1992
🏛
Elsevier Science
🌐
English
⚖ 382 KB
Luminescence properties of hole traps in
✍
M. Asghar; P. Muret; I. Hussain; B. Beaumont; P. Gibart; M. Shahid
📂
Article
📅
2006
🏛
Elsevier Science
🌐
English
⚖ 188 KB
A detailed investigation on p-n junction diodes of GaN using deep level transient Fourier spectroscopy (DLTFS) has been carried out. The typical deep level spectra on the various diodes on the same wafer demonstrate three electron levels labelled as E1, E2 and E3 and a hole trap H1 together with a b
Lattice strain relaxation of ZnS layers
✍
N. Lovergine; G. Leo; A.M. Mancini; F. Romanato; A.V. Drigo; C. Giannini; L. Tap
📂
Article
📅
1994
🏛
Elsevier Science
🌐
English
⚖ 519 KB
Modulation of electronic properties in l
✍
P. Zwicknagl; W. Rehm; E. Bauser
📂
Article
📅
1984
🏛
Springer US
🌐
English
⚖ 715 KB