𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing

✍ Scribed by N. A. Sobolev; B. Ya. Ber; A. M. Emel’yanov; A. P. Kovarskiĭ; E. I. Shek


Book ID
111443729
Publisher
Springer
Year
2007
Tongue
English
Weight
202 KB
Volume
41
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES