Dislocation-induced electronic levels in semi-insulated CdTe

✍ Scribed by V. Babentsov; V. Boiko; G.A. Schepelskii; R.B. James; J. Franc; J. Procházka; P. Hlídek

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 196 KB
• Volume: 633
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2010.06.129

✦ Synopsis

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL) and compared our data with earlier results. We confirmed the direct correlation between Y-emission and dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density o2 Â 10 5 cm À 2 ). Plastic deformation also increased the concentrations of grown-in defects, namely, those of an important midgap level E C À 0.74 eV in CdTe and Cd 1 À x Zn x Te (x o 0.1), the materials of choice in today's detector technology. Our findings demonstrate that dislocation-induced defects can degrade charge collection in radiation detectors.