A general review on deep levels in CdTe created by doping of group IV elements and of 3d transition metal impurities is presented. We compare these data with some of our experimental results on Fe-and V-doped CdTe crystals. The problem of compensation is discussed.
Deep-level photoluminescence in semi-insulating CdTe(In) and CdTe(Sn)
✍ Scribed by Jan Franc; Pavel Hlídek; Eduard Belas; Jan Kubát; Hassan Elhadidy; Roman Fesh
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 162 KB
- Volume
- 591
- Category
- Article
- ISSN
- 0168-9002
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