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Dislocation-induced composition profile in alloy semiconductors

โœ Scribed by H. Ye; P.F. Lu; Z.Y. Yu; D.L. Wang; Z.H. Chen; Y.M. Liu; S.M. Wang

Book ID
104093848
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
656 KB
Volume
150
Category
Article
ISSN
0038-1098

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โœฆ Synopsis

We present a novel computational method by combining the finite element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appear around the dislocation core. We find that the dominant driving force of non-uniform composition is strain contribution. Moreover, the method can be applied to the dislocated nanoscale heterostructures which are inaccessible by atomic treatment.

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An X-ray diffraction line profile analysis on cold-worked Pb-Bi alloys in the aphase is presented. The anisotropic broadening of X-ray diffraction lines has been interpreted in terms of dislocation induced strain broadening only. Dislocations are found to be predominantly of screw type from a modifi