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Dislocation-free LEC growth of InP doped with Ge and S

โœ Scribed by B. Cockayne; T. Bailey; W.R. MacEwan


Book ID
107789864
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
286 KB
Volume
76
Category
Article
ISSN
0022-0248

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The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A a