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Dislocation electrical conductivity of plastically deformed natural diamonds

โœ Scribed by S. N. Samsonenko; N. D. Samsonenko; V. I. Timchenko


Book ID
111444716
Publisher
Springer
Year
2010
Tongue
English
Weight
154 KB
Volume
44
Category
Article
ISSN
1063-7826

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The yield strength of GaN bulk crystals determined directly by means of compressive deformation is around 100-200 MPa in the temperature range 900-1000 C. On the basis of the observed temperature and strain rate dependencies of yield stress, the dislocation mobility at elevated temperatures is evalu