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Dislocation core structures and mobilities in MoSi2

✍ Scribed by M.I Baskes; R.G Hoagland


Book ID
104402531
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
307 KB
Volume
49
Category
Article
ISSN
1359-6454

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✦ Synopsis


Using a modified version of the embedded atom method (EAM) that includes angular forces, potentials are developed for MoSi 2 . The potentials describe the structural and elastic properties in reasonable agreement with experiment. These potentials are used to calculate the core structures and resistance to glide for four straight dislocations that are observed in MoSi 2 . In contrast to previous calculations in materials with simple crystal structures, such as face-centered cubic metals, it was necessary to use molecular dynamics at elevated temperature to obtain any dislocation mobility. It is found that only one of the dislocations, a/2Ν—111͘(110) with predominantly edge character, has any significant mobility at reasonable stresses. In one case, the dislocation dissociates into seven partials at high shear strain and the response is asymmetric with respect to the direction of the applied shear strain.


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## Abstract We performed density‐functional theory simulations and obtained a new stable reconfiguration of shuffle 60Β° dislocation in silicon. The configuration is characterized by a complex of a shuffle 60Β° dislocation and an additional bond defect. Its mobility is discussed by determining the cr