Dislocation core structures and mobilities in MoSi2
β Scribed by M.I Baskes; R.G Hoagland
- Book ID
- 104402531
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 307 KB
- Volume
- 49
- Category
- Article
- ISSN
- 1359-6454
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β¦ Synopsis
Using a modified version of the embedded atom method (EAM) that includes angular forces, potentials are developed for MoSi 2 . The potentials describe the structural and elastic properties in reasonable agreement with experiment. These potentials are used to calculate the core structures and resistance to glide for four straight dislocations that are observed in MoSi 2 . In contrast to previous calculations in materials with simple crystal structures, such as face-centered cubic metals, it was necessary to use molecular dynamics at elevated temperature to obtain any dislocation mobility. It is found that only one of the dislocations, a/2Ν111Ν(110) with predominantly edge character, has any significant mobility at reasonable stresses. In one case, the dislocation dissociates into seven partials at high shear strain and the response is asymmetric with respect to the direction of the applied shear strain.
π SIMILAR VOLUMES
## Abstract We performed densityβfunctional theory simulations and obtained a new stable reconfiguration of shuffle 60Β° dislocation in silicon. The configuration is characterized by a complex of a shuffle 60Β° dislocation and an additional bond defect. Its mobility is discussed by determining the cr