✦ LIBER ✦

Dislocation behavior in heavily germanium-doped silicon crystal

✍ Scribed by Toshinori Taishi; Xinming Huang; Ichiro Yonenaga; Keigo Hoshikawa

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 228 KB
Volume: 5
Category: Article
ISSN: 1369-8001
DOI: 10.1016/s1369-8001(02)00128-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electron mobility in heavily doped, hot

Electron mobility in heavily doped, hot pressed silicon germanium alloys

✍ D.M. Rowe 📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 265 KB

Electron and phonon self-energies in hea

Electron and phonon self-energies in heavily doped germanium and silicon

✍ Manuel Cardona 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 683 KB

Growth and characterization of heavily d

Growth and characterization of heavily doped silicon crystals

✍ R. Scala; M. Porrini; G. Borionetti 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 298 KB 👁 1 views

## Abstract Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market

Anomalous magnetoresistance in heavily a

Anomalous magnetoresistance in heavily antimony doped germanium

✍ Y. Ootuka; S. Kobayashi; S. Ikehata; W. Sasaki; J. Kondo 📂 Article 📅 1979 🏛 Elsevier Science 🌐 English ⚖ 295 KB

Bi2Te3 Crystals Heavily Doped with Germa

Bi2Te3 Crystals Heavily Doped with Germanium Atoms

✍ Doz. Dr. sc. P. Lošt'ák; Ing. Dr. R. Novotný; Ing. J. Navrátil; Prof. Dr. sc. J. 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 461 KB 👁 1 views

Dislocation profiles in silicon-doped Ga

Dislocation profiles in silicon-doped GaAs single crystals

✍ F. Moravec; B. Stepanek; V. Sestakova 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 119 KB