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Discrete resistance fluctuations in pressure-type point contacts

✍ Scribed by J. A. Kokkedee; C. Thier; A. G. M. Jansen

Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
672 KB
Volume
505
Category
Article
ISSN
0003-3804

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✦ Synopsis

In high ohmic pressure-type metallic point contacts (resistance range 50 Q to 3 kQ) the point-contact resistance is observed to switch randomly between two or more discrete levels. This effect can be explained by the motion or reorientation of single defects, thereby changing their cross section for electron scattering. From the temperature-and voltage-dependence of the characteristic times of the fluctuations, electromigration parameters for a defect in silver are extracted.

πŸ“œ SIMILAR VOLUMES

Charge fluctuations in quantum point con
Charge fluctuations in quantum point contact
✍ B.R. BuΕ‚ka; I.V. Dinu; M. Ε’olea πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 165 KB

We present studies of the role of charge fluctuations in transport through a quantum point contact (QPC). Our model of QPC is based on assumption of a specific electronic energy structure with a resonant level below the electronic sub-band. We show that charge fluctuations lead to a dynamical Coulom