Thin, solid films of a CuC1:CuBr:Cul mixed phase are formed on copper substrates by an electrolytic deposition technique. The films are incorporated in solid-state cells with the configuration Mg/CuCl:CuBr:CuI/Cu. A typical cell gives an open-circuit voltage of -1.3 V, a short-circuit current of -10
Discharge characteristics of solid-state cells with magnesium and copper electrodes and thin-film, solid electrolyte of cuprous sulphate
β Scribed by M.A.K.L. Dissanayake; J. Karunamuni; H.M.N. Bandara
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 184 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0378-7753
No coin nor oath required. For personal study only.
β¦ Synopsis
Thin, solid films of cuprous sulphate have been formed on copper substrates by a chemical deposition technique. Solid-state cells of configuration Mg(-)/C&SO&u(+) have been fabricated and their constant-load discharge characteristics have been investigated. A typical cell exhibits an open-circuit voltage of -1.8 V and a capacity of -10 mA h.
π SIMILAR VOLUMES
A gas-tight yttria-stabilized zirconia (YSZ) electrolyte film was fabricated on porous NiOΒ±YSZ anode substrates by a binder-assisted slurry casting technique. The scanning electron microscope (SEM) results showed that the YSZ film was relatively dense with a thickness of 10 lm. La 0.8 Sr 0.2 MnO 3 (