Thin, solid films of cuprous sulphate have been formed on copper substrates by a chemical deposition technique. Solid-state cells of configuration Mg(-)/C&SO&u(+) have been fabricated and their constant-load discharge characteristics have been investigated. A typical cell exhibits an open-circuit vo
โฆ LIBER โฆ
Discharge characteristics of solid-state cells incorporating thin films of a cuprous halide mixed phase
โ Scribed by M.A.K.L. Dissanayake; J. Karunamuni
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 219 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0378-7753
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โฆ Synopsis
Thin, solid films of a CuC1:CuBr:Cul mixed phase are formed on copper substrates by an electrolytic deposition technique. The films are incorporated in solid-state cells with the configuration Mg/CuCl:CuBr:CuI/Cu. A typical cell gives an open-circuit voltage of -1.3 V, a short-circuit current of -10 mA, and a capacity of -5 mA h.
๐ SIMILAR VOLUMES
Discharge characteristics of solid-state
โ
M.A.K.L. Dissanayake; J. Karunamuni; H.M.N. Bandara
๐
Article
๐
1988
๐
Elsevier Science
๐
English
โ 184 KB