Directional dependence of InAs island formation on patterned GaAs
✍ Scribed by Mark S. Miller; Søren Jeppesen; Bernhard Kowalski; Ivan Maximov; Lars Samuelson
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 935 KB
- Volume
- 164
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
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## Abstract We report on the ability to grow InAs quantum dots into patterns of any shape. We specifically demonstrate the spatial localization of InAs quantum dots on mesa and trench patterns varying from line, square and triangle patterns on GaAs (100) substrates by molecular beam epitaxy. Based
We studied the formation of InAs islands in holes defined by electron-beam lithography on GaAs substrates. The islands grew selectively in the holes, with one to nine islands per hole. The number of islands depends simply on the hole diameter, filling the holes at a constant effective two-dimensiona