Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

✍ Scribed by Arehart, A.R.; Sasikumar, A.; Rajan, S.; Via, G.D.; Poling, B.; Winningham, B.; Heller, E.R.; Brown, D.; Pei, Y.; Recht, F.; Mishra, U.K.; Ringel, S.A.

• Book ID: 123240143
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 471 KB
• Volume: 80
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2012.09.010