**The fabrication of p–n junctions in individual GaN nanorods** has been realized using hydride vapor phase epitaxy. Application of the resulting heterostructures as wide bandgap current rectifiers with a high breakdown voltage and for near UV light‐emitting diodes is demonstrated. The Figure is a l
Direct Laser Writing of Nanoscale Light-Emitting Diodes
✍ Scribed by Oleg Makarovsky; Santosh Kumar; Armando Rastelli; Amalia Patanè; Laurence Eaves; Alexander G. Balanov; Oliver G. Schmidt; Richard Campion; Charles T. Foxon
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 693 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0935-9648
No coin nor oath required. For personal study only.
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