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Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

✍ Scribed by H. Ebe; T. Okamoto; H. Nishino; T. Saito; Y. Nishijima; M. Uchikoshi; M. Nagashima; H. Wada


Book ID
111880154
Publisher
Springer US
Year
1996
Tongue
English
Weight
457 KB
Volume
25
Category
Article
ISSN
0361-5235

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Microstructures of AlGaN/AlN/Si (111) Gr
✍ Xi, Dongjuan ;Zheng, Youdou ;Chen, Peng ;Zhao, Zuoming ;Chen, Ping ;Xie, Shiyong πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 101 KB πŸ‘ 2 views

In this paper the X-ray photoelectron spectrum and the Auger electron spectrum were used to study the microstructures of AlGaN/AlN/Si (111) grown by metal organic chemical vapor deposition. The results indicated that a broad transition region, about 20 nm, was present at the interface of AlN/Si and