We have measured depth profiles of N isotopes by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) before and after implantation of 100 keV N isotopes into Si 3 N 4 films on SiO 2 -glass substrates, which were prepared by using RF-magnetron-reactive-sputtering depositi
β¦ LIBER β¦
Direct bonding of Si wafer pairs with SiO2 and Si3N4 films with a fast linear annealing
β Scribed by Sang Hyun Lee; Ohsung Song; C.S. Yoon; C.K. Kim
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 177 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1369-8001
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