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Direct and inverse equivalent InAlAs–InP interfaces grown by gas-source molecular beam epitaxy

✍ Scribed by Vignaud, D.; Wallart, X.; Mollot, F.


Book ID
121489008
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
235 KB
Volume
72
Category
Article
ISSN
0003-6951

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✍ Teng Teng; Likun Ai; Anhuai Xu; Hao Sun; Fuying Zhu; Ming Qi 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 1002 KB

A new InP/InGaAs/InP DHBT structure with graded composition base was optimized and grown successfully in this work. The gallium (Ga) composition increased gradually from 47% on the collector side to 55% on the emitter side. The InP/InGaAs/InP DHBT structures were grown by gas source molecular beam e