InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy

✍ Scribed by Teng Teng; Likun Ai; Anhuai Xu; Hao Sun; Fuying Zhu; Ming Qi

• Book ID: 104022303
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 1002 KB
• Volume: 323
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.12.080

✦ Synopsis

A new InP/InGaAs/InP DHBT structure with graded composition base was optimized and grown successfully in this work. The gallium (Ga) composition increased gradually from 47% on the collector side to 55% on the emitter side. The InP/InGaAs/InP DHBT structures were grown by gas source molecular beam epitaxy (GSMBE). Characteristics of InP, InGaAs and InGaAsP materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100 Â 100 mm 2 was fabricated. The offset voltage of 0.2 V, BV CEO 41.2 V, current gain of ß ¼550 at V CE of 1.0 V were achieved. The reasons for the low breakdown voltage were analyzed.