Numerical modeling of a moving boundary
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H. Rohdin
📂
Article
📅
1983
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Elsevier Science
🌐
English
⚖ 845 KB
We have modeled numerically the redistribution by diffusion and drift of impurities during epitaxial growth of semiconductors. We use a Crank-Nicholson scheme with dynamically adjusted time increment. The coupling between the redistribution of the charged impurities and the electric field is account