Numerical modeling of a moving boundary diffusion/drift problem

✍ Scribed by H. Rohdin

• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 845 KB
• Volume: 9
• Category: Article
• ISSN: 0898-1221
• DOI: 10.1016/0898-1221(83)90131-1

✦ Synopsis

We have modeled numerically the redistribution by diffusion and drift of impurities during epitaxial growth of semiconductors. We use a Crank-Nicholson scheme with dynamically adjusted time increment. The coupling between the redistribution of the charged impurities and the electric field is accounted for by solving the nonlinear Shockley-Poisson equation for an arbitrary doping profile by means of a quasi-linearization scheme. The combination of large gradients and a moving boundary necessitates a dynamically adjusted nonuniform m&h in the finite difference schemes. Except for some occasionally occurring spurious ripples, which are accounted for by stability arguments, the results are physically real and can explain some experimentally observed features [I].