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Diffusion of phosphorus implanted in germanium

✍ Scribed by Th. Canneaux; D. Mathiot; J.P. Ponpon; S. Roques; S. Schmitt; Ch. Dubois

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
234 KB
Volume
154-155
Category
Article
ISSN
0921-5107

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In this work, we investigate the implantation and diffusion of phosphorous (P) in germanium (Ge). Ge wafers were implanted at two different doses (5 Γ‚ 10 13 and 10 15 cm Γ€2 ) and a range of energies (30, 50 and 150 keV). Part of the wafers was covered with a 40 nm silicon dioxide (SiO 2 ) and an 80