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Diffusion and activation of phosphorus in germanium

✍ Scribed by P. Tsouroutas; D. Tsoukalas; I. Zergioti; N. Cherkashin; A. Claverie

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
230 KB
Volume
11
Category
Article
ISSN
1369-8001

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In this work, we investigate the implantation and diffusion of phosphorous (P) in germanium (Ge). Ge wafers were implanted at two different doses (5 Γ‚ 10 13 and 10 15 cm Γ€2 ) and a range of energies (30, 50 and 150 keV). Part of the wafers was covered with a 40 nm silicon dioxide (SiO 2 ) and an 80